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| Transistors 2SC1317, 2SC1318 Silicon NPN epitaxial planer type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SA719 and 2SA720 I Features * Low collector to emitter saturation voltage VCE(sat) * Complementary pair with 2SA719 and 2SA720 0.70.1 5.00.2 4.00.2 0.70.2 13.50.5 I Absolute Maximum Ratings Ta = 25C Parameter Collector to base voltage Collector to emitter voltage 2SC1317 2SC1318 2SC1317 2SC1318 VEBO ICP IC PC Tj Tstg VCEO Symbol VCBO Rating 30 60 25 50 7 1 500 625 150 -55 to +150 V A mA mW C C V 123 2.540.15 Unit V 5.10.2 0.45+0.15 -0.1 (1.27) (1.27) 2.30.2 0.45+0.15 -0.1 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1: Emitter 2: Collector 3: Base TO-92 Package I Electrical Characteristics Ta = 25C 3C Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio *1 Collector to emitter saturation voltage *1 Base to emitter saturation voltage *1 Transition frequency Collector output capacitance Note) *1: Pulse measurement *2: Rank classification Rank hFE1 Q 85 to 170 R 120 to 240 S 170 to 340 2SC1317 2SC1318 2SC1317 2SC1318 VEBO hFE1 *2 hFE2 VCE(sat) VBE(sat) fT Cob IE = 10 A, IC = 0 VCE = 10 V, IC = 150 mA VCE = 10 V, IC = 500 mA IC = 300 mA, IB = 30 mA IC = 300 mA, IB = 30 mA VCB = 10 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz VCEO IC = 10 mA, IB = 0 Symbol ICBO VCBO Conditions VCB = 20 V, IE = 0 IC = 10 A, IE = 0 30 60 25 50 7 85 40 0.35 1.1 200 6 15 0.6 1.5 V V MHz pF 340 V V Min Typ Max 0.1 Unit A V 1 2SC1317, 2SC1318 PC Ta 800 800 700 Transistors IC VCE Ta = 25C IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA 400 300 200 100 0 3 mA 2 mA 1 mA 800 700 IC IB VCE = 10 V Ta = 25C Collector power dissipation PC (mW) 700 600 500 400 300 200 100 0 Collector current IC (mA) Collector current IC (mA) 600 500 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 14 16 18 20 0 1 2 3 4 5 6 7 8 9 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 VBE(sat) IC 100 hFE IC 300 VCE = 10 V Base to emitter saturation voltage VBE(sat) (V) IC / IB = 10 IC / IB = 10 Forward current transfer ratio hFE 30 10 3 25C 1 -25C 0.3 0.1 0.03 0.01 0.01 0.03 Ta = 75C 250 Ta = 75C 200 25C -25C Ta = 75C 25C -25C 150 100 50 0.1 0.3 1 3 10 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT IE 240 12 Cob VCB Collector output capacitance Cob (pF) Collector to emitter voltage VCER (V) VCB = 10 V Ta = 25C IE = 0 f = 1 MHz Ta = 25C 120 VCER RBE IC = 2 mA Ta = 25C 100 Transition frequency fT (MHz) 200 10 160 8 80 120 6 60 2SC1318 40 2SC1317 20 80 4 40 2 0 -1 -2 -3 -5 -10 -20-30 -50 -100 0 0 1 23 5 10 20 30 50 100 1 3 10 30 100 300 1 000 Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (k) 2 Transistors ICEO Ta 104 VCE = 10 V 2SC1317, 2SC1318 Area of safe operation (ASO) 10 3 Single pulse Ta = 25C ICP IC t = 10 ms t=1s DC Collector current IC (A) 0 20 40 60 80 100 120 140 160 180 200 10 3 1 ICEO (Ta) ICEO (Ta = 25C) 0.3 0.1 0.03 0.01 102 10 0.003 1 0.001 0.1 0.3 1 3 10 30 100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) 3 |
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